All IGBT. IXSH15N120B Datasheet

 

IXSH15N120B Datasheet and Replacement


   Type Designator: IXSH15N120B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qgⓘ - Total Gate Charge, typ: 57 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXSH15N120B Datasheet (PDF)

 ..1. Size:54K  ixys
 ixsh15n120b ixst15n120b.pdf pdf_icon

IXSH15N120B

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 ..2. Size:53K  ixys
 ixsh15n120b.pdf pdf_icon

IXSH15N120B

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 0.1. Size:55K  ixys
 ixsh15n120bd1.pdf pdf_icon

IXSH15N120B

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

 0.2. Size:56K  ixys
 ixsh15n120bd1 ixst15n120bd1.pdf pdf_icon

IXSH15N120B

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

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Datasheet: IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , CRG60T60AN3H , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , IXSH25N100 .

History: IXGH20N30 | MGS13002D | IKD10N60R

Keywords - IXSH15N120B transistor datasheet

 IXSH15N120B cross reference
 IXSH15N120B equivalent finder
 IXSH15N120B lookup
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