IXSH20N60AU1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXSH20N60AU1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 150
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 3(max)
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Collector Capacity (Cc), typ, pF: 250
Total Gate Charge (Qg), typ, nC: 90
Package: TO247
IXSH20N60AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXSH20N60AU1 Datasheet (PDF)
ixsh20n60au1.pdf
Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC
ixsh20n60u1.pdf
Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC
ixsh20n60b2d1.pdf
IXSH 20N60B2D1VCES = 600 VHigh Speed IGBTIC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C35 AG = Gate C = CollectorIC110 TC = 110C20 AE
ixsh24n60bd1.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixsh24n60a.pdf
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixsh25n120au1.pdf
IXSH25N120AU1IGBT with Diode IC25 = 50 A"S" Series - Improved SCSOA CapabilityVCES = 1200 VVCE(sat) = 4.0 VCGESymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGECIC25 TC = 25C 50 AIC90 TC = 90C 25 AICM TC = 25C, 1 ms 80 AFeaturesSSOA
ixsh24n60u1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
ixsh24n60 a.pdf
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
ixsh25n120a.pdf
IXSH25N120AIC25 = 50 AIGBTImproved SCSOA Capability VCES = 1200 VVCE(sat) = 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 50 A EIC90 TC = 90C 25 AICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, TJ = 125C, RG = 33 W ICM = 50 A
ixsh24n60u1 ixsh24n60au1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
ixsh24n60b.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixsh24n60au1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
ixsh24n60.pdf
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
Datasheet: IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IRGB4630D , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , IXSH25N100 , IXSH25N100A , IXSH25N120A .
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