All IGBT. IXSH24N60 Datasheet

 

IXSH24N60 Datasheet and Replacement


   Type Designator: IXSH24N60
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qgⓘ - Total Gate Charge, typ: 75 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXSH24N60 Datasheet (PDF)

 ..1. Size:111K  ixys
 ixsh24n60 a.pdf pdf_icon

IXSH24N60

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

 ..2. Size:110K  ixys
 ixsh24n60.pdf pdf_icon

IXSH24N60

Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em

 0.1. Size:100K  ixys
 ixsh24n60bd1.pdf pdf_icon

IXSH24N60

IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC

 0.2. Size:37K  ixys
 ixsh24n60u1 ixsh24n60au1.pdf pdf_icon

IXSH24N60

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB

SHOW MORE

Datasheet: IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , SGT50T65FD1PN , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , IXSH25N100 , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 .

History: IXGT28N30 | IXSH30N60B2D1 | FGH30S150P | DG20X06T2 | MUBW50-12T8 | HGT1S2N120CNDS | HMG40N60A

Keywords - IXSH24N60 transistor datasheet

 IXSH24N60 cross reference
 IXSH24N60 equivalent finder
 IXSH24N60 lookup
 IXSH24N60 substitution
 IXSH24N60 replacement

 

 
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