IXSH24N60 Specs and Replacement
Type Designator: IXSH24N60
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 48 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
IXSH24N60 Substitution - IGBT ⓘ Cross-Reference Search
IXSH24N60 datasheet
ixsh24n60 a.pdf
Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em... See More ⇒
ixsh24n60.pdf
Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em... See More ⇒
ixsh24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC... See More ⇒
ixsh24n60u1 ixsh24n60au1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB ... See More ⇒
Specs: IXSA16N60, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, IXSH16N60U1, IXSH20N60AU1, IXSH20N60U1, IKW50N60T, IXSH24N60A, IXSH24N60AU1, IXSH24N60U1, IXSH25N100, IXSH25N100A, IXSH25N120A, IXSH25N120AU1, IXSH30N60
Keywords - IXSH24N60 transistor spec
IXSH24N60 cross reference
IXSH24N60 equivalent finder
IXSH24N60 lookup
IXSH24N60 substitution
IXSH24N60 replacement
History: NCE30TD60BT
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