IXSH24N60 PDF and Equivalents Search

 

IXSH24N60 Specs and Replacement

Type Designator: IXSH24N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO247

 IXSH24N60 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXSH24N60 datasheet

 ..1. Size:111K  ixys
ixsh24n60 a.pdf pdf_icon

IXSH24N60

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em... See More ⇒

 ..2. Size:110K  ixys
ixsh24n60.pdf pdf_icon

IXSH24N60

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em... See More ⇒

 0.1. Size:100K  ixys
ixsh24n60bd1.pdf pdf_icon

IXSH24N60

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC... See More ⇒

 0.2. Size:37K  ixys
ixsh24n60u1 ixsh24n60au1.pdf pdf_icon

IXSH24N60

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB ... See More ⇒

Specs: IXSA16N60, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, IXSH16N60U1, IXSH20N60AU1, IXSH20N60U1, IKW50N60T, IXSH24N60A, IXSH24N60AU1, IXSH24N60U1, IXSH25N100, IXSH25N100A, IXSH25N120A, IXSH25N120AU1, IXSH30N60

Keywords - IXSH24N60 transistor spec

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