All IGBT. IXSH25N100 Datasheet

 

IXSH25N100 IGBT. Datasheet pdf. Equivalent

Type Designator: IXSH25N100

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Maximum Collector Current |Ic|, A: 50A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 0

Package: TO247

IXSH25N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXSH25N100 Datasheet (PDF)

2.1. ixsh25n120au1.pdf Size:36K _ixys

IXSH25N100
IXSH25N100

IXSH25N120AU1 IGBT with Diode IC25 = 50 A "S" Series - Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V C G E Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G E C IC25 TC = 25C 50 A IC90 TC = 90C 25 A ICM TC = 25C, 1 ms 80 A Features SSOA VGE = 15 V,

2.2. ixsh25n120a.pdf Size:31K _igbt_a

IXSH25N100
IXSH25N100

IXSH25N120A IC25 = 50 A IGBT Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°C 50 A E IC90 TC = 90°C 25 A ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, TJ = 125°C, RG = 33 W ICM = 50 A

2.3. ixsh25n120au1.pdf Size:34K _igbt_a

IXSH25N100
IXSH25N100

IXSH25N120AU1 IGBT with Diode IC25 = 50 A "S" Series - Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V C G E Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G E C IC25 TC = 25°C 50 A IC90 TC = 90°C 25 A ICM TC = 25°C, 1 ms 80 A Features SSOA

Datasheet: IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , FGH60N60SFD , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 , IXSH30N60A , IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 .

 


IXSH25N100
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