IXSH30N60C Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXSH30N60C Specs and Replacement

Type Designator: IXSH30N60C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

IXSH30N60C Substitution

- IGBT ⓘ Cross-Reference Search

IXSH30N60C datasheet

..1. Size:132K ixys
ixsh30n60c.pdf pdf_icon

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM ... See More ⇒

0.1. Size:71K ixys
ixsh30n60cd1.pdf pdf_icon

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G... See More ⇒

5.1. Size:81K ixys
ixsh30n60u1.pdf pdf_icon

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 V High Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 V Combi Packs Short Circuit SOA Capability TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gat... See More ⇒

5.2. Size:81K ixys
ixsh30n60u1 ixsh30n60au1.pdf pdf_icon