All IGBT. IXSH35N120A Datasheet

 

IXSH35N120A IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSH35N120A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 235 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO247

 IXSH35N120A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSH35N120A Datasheet (PDF)

 ..1. Size:63K  ixys
 ixsh35n120a.pdf

IXSH35N120A IXSH35N120A

High Voltage, IXSH 35N120A VCES = 1200 VHigh speed IGBT IC25 = 70 AVCE(sat) = 4 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AG = Gate, C = Collector,IC90 TC = 90C35 AE = Emitter, TAB = Collect

 4.1. Size:80K  ixys
 ixsh35n120b.pdf

IXSH35N120A IXSH35N120A

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 4.2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf

IXSH35N120A IXSH35N120A

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 6.1. Size:144K  ixys
 ixsh35n140a.pdf

IXSH35N120A IXSH35N120A

VCES = 1400VHigh Voltage IXSH35N140AIC90 = 35AHigh speed IGBTVCE(sat) 4.0VShort Circuit SOA Capabilitytfi(typ) = 200nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1400 VGVCGR TJ = 25C to 150C, RGE = 1M 1400 VCE TabVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 70 AE = Emi

 6.2. Size:78K  ixys
 ixsh35n100a.pdf

IXSH35N120A IXSH35N120A

High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A

Datasheet: IXSH30N60A , IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IRGP4066D , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS .

 

 
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