IXSH35N140A PDF and Equivalents Search

 

IXSH35N140A Specs and Replacement

Type Designator: IXSH35N140A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Package: TO247

 IXSH35N140A Substitution

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IXSH35N140A datasheet

 ..1. Size:144K  ixys
 ixsh35n140a.pdf pdf_icon

IXSH35N140A

VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT VCE(sat) 4.0V Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1400 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V C E Tab VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 70 A E = Emi... See More ⇒

 6.1. Size:80K  ixys
 ixsh35n120b.pdf pdf_icon

IXSH35N140A

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

 6.2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf pdf_icon

IXSH35N140A

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

 6.3. Size:63K  ixys
 ixsh35n120a.pdf pdf_icon

IXSH35N140A

High Voltage, IXSH 35N120A VCES = 1200 V High speed IGBT IC25 = 70 A VCE(sat) = 4 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A G = Gate, C = Collector, IC90 TC = 90 C35 A E = Emitter, TAB = Collect... See More ⇒

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Specs: IXSH30N60AU1, IXSH30N60B, IXSH30N60BD1, IXSH30N60C, IXSH30N60CD1, IXSH30N60U1, IXSH35N100A, IXSH35N120A, GT30F131, IXSH40N60, IXSH40N60A, IXSH40N60B, IXSH45N100, IXSH45N120, IXSH50N60B, IXSH50N60BS, IXSK30N60BD1

Keywords - IXSH35N140A transistor spec

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