IXSH40N60A Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXSH40N60A Specs and Replacement

Type Designator: IXSH40N60A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3(max) V @25℃

tr ⓘ - Rise Time, typ: 170 nS

Coesⓘ - Output Capacitance, typ: 350 pF

Package: TO247

IXSH40N60A Substitution

- IGBT ⓘ Cross-Reference Search

IXSH40N60A datasheet

..1. Size:277K ixys
ixsh40n60 ixsh40n60a ixsm40n60 ixsm40n60a.pdf pdf_icon

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5.1. Size:54K ixys
ixsh40n60b.pdf pdf_icon

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC... See More ⇒

5.2. Size:55K ixys
ixsh40n60b ixst40n60b.pdf pdf_icon

9.1. Size:102K ixys
ixsh45n100.pdf pdf_icon

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 V IXSM 45N100 IC25 = 75 A VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC90 TC = 90 C45 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 180 A ... See More ⇒