KP810V Datasheet and Replacement
Type Designator: KP810V
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 200 nS
Package: TO218
KP810V substitution
KP810V Datasheet (PDF)
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Datasheet: IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , KP810A , KP810B , GT50JR22 , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 .
History: IXSX50N60AU1S
Keywords - KP810V transistor datasheet
KP810V cross reference
KP810V equivalent finder
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History: IXSX50N60AU1S
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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