KP810V Specs and Replacement
Type Designator: KP810V
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Package: TO218
KP810V Substitution - IGBT ⓘ Cross-Reference Search
KP810V datasheet
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Specs: IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, KP730A, KP731A, KP810A, KP810B, FGH40N60SFD, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4, MDI300-12A4, MDI550-12A4, MDI75-12A3, MGB15N35CLT4
Keywords - KP810V transistor spec
KP810V cross reference
KP810V equivalent finder
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History: IGC11T120T6L | MDI200-12A4 | APT33GF120LRD | MG50J2YS50 | MDI150-12A4 | IGC189T120T8RL
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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