MGP15N38CL Datasheet and Replacement
Type Designator: MGP15N38CL
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Package: TO220
MGP15N38CL substitution
MGP15N38CL Datasheet (PDF)
mgb15n35clt4 mgp15n35cl.pdf

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350
mgp15n35cl-d.pdf

MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig
Datasheet: MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , CRG40T60AN3H , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E .
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