All IGBT. MSAHX60F60B Datasheet

 

MSAHX60F60B Datasheet and Replacement


   Type Designator: MSAHX60F60B
   Type: IGBT
   Type of IGBT Channel: P
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 2500pF pF
   Package: SMD-P
      - IGBT Cross-Reference

 

MSAHX60F60B Datasheet (PDF)

 4.1. Size:35K  microsemi
 msahx60f60a.pdf pdf_icon

MSAHX60F60B

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGX60F60AFAX: (714) 966-5256MSAHX60F60AFeatures600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof60 Amps Hermetically sealed, surface mount power package Low package inductance2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa

 9.1. Size:34K  microsemi
 msahx75l60c.pdf pdf_icon

MSAHX60F60B

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAHX75L60CFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque

Datasheet: MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , STGB10NB37LZ , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - MSAHX60F60B transistor datasheet

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