MSAHX60F60B PDF and Equivalents Search

 

MSAHX60F60B Specs and Replacement

Type Designator: MSAHX60F60B

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 2500pF pF

Package: SMD-P

 MSAHX60F60B Substitution

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MSAHX60F60B datasheet

 4.1. Size:35K  microsemi
 msahx60f60a.pdf pdf_icon

MSAHX60F60B

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGX60F60A FAX (714) 966-5256 MSAHX60F60A Features 600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 60 Amps Hermetically sealed, surface mount power package Low package inductance 2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa... See More ⇒

 9.1. Size:34K  microsemi
 msahx75l60c.pdf pdf_icon

MSAHX60F60B

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAHX75L60C Features 600 Volts Rugged polysilicon gate cell structure 75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package 1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque... See More ⇒

Specs: MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , GT30F133 , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 .

History: IXDH30N120D1

Keywords - MSAHX60F60B transistor spec

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