All IGBT. MSAHX60F60B Datasheet

 

MSAHX60F60B IGBT. Datasheet pdf. Equivalent

Type Designator: MSAHX60F60B

Type of IGBT Channel: P-Channel

Maximum Power Dissipation (Pc), W: 300W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 2500pF

Package: SMD-P

MSAHX60F60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSAHX60F60B Datasheet (PDF)

1.1. msahx60f60a.pdf Size:35K _igbt

MSAHX60F60B
MSAHX60F60B

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 MSAGX60F60A FAX: (714) 966-5256 MSAHX60F60A Features 600 Volts • Rugged polysilicon gate cell structure • high current handling capability, latch-proof 60 Amps • Hermetically sealed, surface mount power package • Low package inductance 2.9 Volts vce(sat) • Very low thermal resistance • Reverse polarity availa

5.1. msahx75l60c.pdf Size:34K _igbt

MSAHX60F60B
MSAHX60F60B

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAHX75L60C Features 600 Volts • Rugged polysilicon gate cell structure 75 Amps • high current handling capability, latch-proof • Hermetically sealed, surface mount power package 1.8 Volts vce(sat) • Low package inductance • Very low thermal resistance • Reverse polarity available upon reque

Datasheet: MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , STGB10NB37LZ , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 .

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |