All IGBT. MSAHX75L60C Datasheet

 

MSAHX75L60C IGBT. Datasheet pdf. Equivalent


   Type Designator: MSAHX75L60C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 4000pF pF
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: SMD-P

 MSAHX75L60C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSAHX75L60C Datasheet (PDF)

 ..1. Size:34K  microsemi
 msahx75l60c.pdf

MSAHX75L60C MSAHX75L60C

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAHX75L60CFeatures600 Volts Rugged polysilicon gate cell structure75 Amps high current handling capability, latch-proof Hermetically sealed, surface mount power package1.8 Volts vce(sat) Low package inductance Very low thermal resistance Reverse polarity available upon reque

 9.1. Size:35K  microsemi
 msahx60f60a.pdf

MSAHX75L60C MSAHX75L60C

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGX60F60AFAX: (714) 966-5256MSAHX60F60AFeatures600 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof60 Amps Hermetically sealed, surface mount power package Low package inductance2.9 Volts vce(sat) Very low thermal resistance Reverse polarity availa

Datasheet: MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MGD623S , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 .

 

 
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