All IGBT. PPNGZ52F120A Datasheet

 

PPNGZ52F120A IGBT. Datasheet pdf. Equivalent

Type Designator: PPNGZ52F120A

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 300

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 3.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 52

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 110

Maximum Collector Capacity (Cc), pF: 2200pF

Package: TO258

PPNGZ52F120A Transistor Equivalent Substitute - IGBT Cross-Reference Search

PPNGZ52F120A IGBT. Datasheet pdf. Equivalent

Type Designator: PPNGZ52F120A

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 300

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 3.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 52

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 110

Maximum Collector Capacity (Cc), pF: 2200pF

Package: TO258

PPNGZ52F120A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PPNGZ52F120A Datasheet (PDF)

0.1. ppngz52f120a.pdf Size:88K _microsemi

PPNGZ52F120A
PPNGZ52F120A

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH: 561-842-0305 PPNGZ52F120A Fax: 561-845-7813 PPNHZ52F120A Features • Rugged polysilicon gate cell structure • high current handling capability, latch-proof • Hermetically sealed package • Low package inductance • Very low thermal resistance TO-258 • Reverse polarity available upon request: PPNH(G)Z52F120

Datasheet: MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , IRGP4062D , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 .

 

 
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