All IGBT. SGF30N60RUF Datasheet

 

SGF30N60RUF Datasheet and Replacement


   Type Designator: SGF30N60RUF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 304 pF
   Qg ⓘ - Total Gate Charge, typ: 122 nC
   Package: TO3PF
 

 SGF30N60RUF substitution

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SGF30N60RUF Datasheet (PDF)

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SGF30N60RUF

Datasheet: RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , NGTB75N65FL2 , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD .

Keywords - SGF30N60RUF transistor datasheet

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