SGF30N60RUF Datasheet and Replacement
Type Designator: SGF30N60RUF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 48 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 304 pF
Package: TO3PF
- IGBT Cross-Reference
SGF30N60RUF Datasheet (PDF)
Datasheet: RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , GT60N321 , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - SGF30N60RUF transistor datasheet
SGF30N60RUF cross reference
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SGF30N60RUF lookup
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History: AOTF5B65M2 | MMG300D120B6UC
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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