SGF30N60RUF PDF and Equivalents Search

 

SGF30N60RUF Specs and Replacement

Type Designator: SGF30N60RUF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 304 pF

Package: TO3PF

 SGF30N60RUF Substitution

- IGBT ⓘ Cross-Reference Search

 

SGF30N60RUF datasheet

 0.1. Size:198K  1
sgf30n60rufd.pdf pdf_icon

SGF30N60RUF

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Specs: RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , IRG4PC40W , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD .

Keywords - SGF30N60RUF transistor spec

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