SGF30N60RUFD Specs and Replacement
Type Designator: SGF30N60RUFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 135 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 48 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 304 pF
Package: TO3PF
SGF30N60RUFD Substitution - IGBT ⓘ Cross-Reference Search
SGF30N60RUFD datasheet
Specs: RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , GT30J122 , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD .
History: SGH10N60RUFD
Keywords - SGF30N60RUFD transistor spec
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History: SGH10N60RUFD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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