SGF30N60RUFD Datasheet. Specs and Replacement

Type Designator: SGF30N60RUFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 135 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 304 pF

Package: TO3PF

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SGF30N60RUFD datasheet

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SGF30N60RUFD

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Specs: RCM10N40, RCM10N40A, RCP10N35, RCP10N40, RCP10N40A, OST50N65H4EWF, SGF15N90D, SGF30N60RUF, IHW20N135R3, SGF40N60UF, SGF40N60UFD, SGF5N150UF, SGF80N60UF, SGF80N60UFD, SGH10N120RUF, SGH10N120RUFD, SGH10N60RUFD

Keywords - SGF30N60RUFD transistor spec

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