IGC100T65T8RM PDF and Equivalents Search

 

IGC100T65T8RM Specs and Replacement

Type Designator: IGC100T65T8RM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.06 V @25℃

Package: CHIP

 IGC100T65T8RM Substitution

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IGC100T65T8RM datasheet

 ..1. Size:78K  infineon
igc100t65t8rm.pdf pdf_icon

IGC100T65T8RM

IGC100T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC100T6... See More ⇒

 5.1. Size:128K  infineon
sigc100t65r3e.pdf pdf_icon

IGC100T65T8RM

SIGC100T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC100T65R... See More ⇒

 6.1. Size:127K  infineon
sigc100t60r3.pdf pdf_icon

IGC100T65T8RM

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par... See More ⇒

 6.2. Size:127K  infineon
sigc100t60r3e.pdf pdf_icon

IGC100T65T8RM

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par... See More ⇒

Specs: IGC03R60D, IGC03R60DE, IGC04R60D, IGC04R60DE, IGC05R60D, IGC05R60DE, IGC06R60D, IGC11T120T8L, TGAN40N60FD, IGC109T120T6RH, IGC109T120T6RL, IGC109T120T6RM, IGC10R60D, IGC10R60DE, IGC10T65QE, IGC114T170S8RH, IGC114T170S8RM

Keywords - IGC100T65T8RM transistor spec

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