All IGBT. IGC100T65T8RM Datasheet

 

IGC100T65T8RM Datasheet and Replacement


   Type Designator: IGC100T65T8RM
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.06 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP
 

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IGC100T65T8RM Datasheet (PDF)

 ..1. Size:78K  infineon
 igc100t65t8rm.pdf pdf_icon

IGC100T65T8RM

IGC100T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC100T6

 5.1. Size:128K  infineon
 sigc100t65r3e.pdf pdf_icon

IGC100T65T8RM

SIGC100T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC100T65R

 6.1. Size:127K  infineon
 sigc100t60r3.pdf pdf_icon

IGC100T65T8RM

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

 6.2. Size:127K  infineon
 sigc100t60r3e.pdf pdf_icon

IGC100T65T8RM

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

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Datasheet: IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IRG4PC50W , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM .

History: APT80GP60B2G

Keywords - IGC100T65T8RM transistor datasheet

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