SGL15N60RUFD Specs and Replacement
Type Designator: SGL15N60RUFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 157 pF
Package: TO264
SGL15N60RUFD Substitution - IGBT ⓘ Cross-Reference Search
SGL15N60RUFD datasheet
Specs: SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , RJP30E2DPP-M0 , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD .
History: YGW75N65T1 | STGWA100H65DFB2 | STGW60H65DFB | STGWT40H65DFB | STGWA30IH65DF | RJH60F6BDPQ-A0
Keywords - SGL15N60RUFD transistor spec
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History: YGW75N65T1 | STGWA100H65DFB2 | STGW60H65DFB | STGWT40H65DFB | STGWA30IH65DF | RJH60F6BDPQ-A0
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