SGL20N60RUFD Datasheet. Specs and Replacement
Type Designator: SGL20N60RUFD 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 32 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 266 pF
Package: TO264
📄📄 Copy
SGL20N60RUFD Substitution
- IGBTⓘ Cross-Reference Search
SGL20N60RUFD datasheet
Specs: SGH5N120RUF, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD, FGA60N65SMD, SGL25N120RUFD, SGL30N60RUFD, SGL40N150, SGL40N150D, SGL50N60RUFD, SGL5N60RUFD, SGL60N90D, SGL60N90DG3
Keywords - SGL20N60RUFD transistor spec
SGL20N60RUFD cross reference
SGL20N60RUFD equivalent finder
SGL20N60RUFD lookup
SGL20N60RUFD substitution
SGL20N60RUFD replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
2sb435 | 2sc1096 | 2sc2058 | a1693 datasheet | bdw94c equivalent | c2389 | c495 transistor | c5242 reemplazo

