All IGBT. SGL40N150 Datasheet

 

SGL40N150 Datasheet and Replacement


   Type Designator: SGL40N150
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 600 nS
   Coesⓘ - Output Capacitance, typ: 700 pF
   Package: TO264
      - IGBT Cross-Reference

 

SGL40N150 Datasheet (PDF)

 ..1. Size:171K  samsung
 sgl40n150.pdf pdf_icon

SGL40N150

N- CHANNEL IGBTSGL40N150FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. (at Ic=40A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V1500VGEGate - Emitter Voltage V 25

 0.1. Size:415K  samsung
 sgl40n150d.pdf pdf_icon

SGL40N150

N- CHANNEL IGBTSGL40N150DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 3.7 V typ. at Ic=40A1* High Input Impedance* Built in Fast Recovery Diode :VF=1.7 at IF=10A, trr=170nSCAPPLICATIONSG* Home Appliance - Induction Heater - IH JAR E - Micro Wave OvenABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollect

Datasheet: SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , IRG7IC28U , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD .

History: DGTD65T40S2PT | DIM1000XSM33-TS001 | IGC99T120T8RH | DGW60N65BTH | IGC07T120T8L | IGP30N60T

Keywords - SGL40N150 transistor datasheet

 SGL40N150 cross reference
 SGL40N150 equivalent finder
 SGL40N150 lookup
 SGL40N150 substitution
 SGL40N150 replacement

 

 
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