SGL40N150 PDF and Equivalents Search

 

SGL40N150 Specs and Replacement

Type Designator: SGL40N150

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.7 V @25℃

tr ⓘ - Rise Time, typ: 600 nS

Coesⓘ - Output Capacitance, typ: 700 pF

Package: TO264

 SGL40N150 Substitution

- IGBT ⓘ Cross-Reference Search

 

SGL40N150 datasheet

 ..1. Size:171K  samsung
 sgl40n150.pdf pdf_icon

SGL40N150

N- CHANNEL IGBT SGL40N150 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage VCE(sat) = 3.7 V typ. (at Ic=40A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 1500 VGE Gate - Emitter Voltage V 25... See More ⇒

 0.1. Size:415K  samsung
 sgl40n150d.pdf pdf_icon

SGL40N150

N- CHANNEL IGBT SGL40N150D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage VCE(sat) = 3.7 V typ. at Ic=40A 1 * High Input Impedance * Built in Fast Recovery Diode VF=1.7 at IF=10A, trr=170nS C APPLICATIONS G * Home Appliance - Induction Heater - IH JAR E - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collect... See More ⇒

Specs: SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGT50T65FD1PN , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD .

Keywords - SGL40N150 transistor spec

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