SGL5N60RUFD Datasheet and Replacement
Type Designator: SGL5N60RUFD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO264
SGL5N60RUFD substitution
SGL5N60RUFD Datasheet (PDF)
Datasheet: SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , FGA60N65SMD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF .
History: MPBW25N120B | IGC10R60DE | AOK30B65M2 | MG150Q2YS40 | FD1600-1200R17HP4-K-B2 | MMG300D120B6TN
Keywords - SGL5N60RUFD transistor datasheet
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History: MPBW25N120B | IGC10R60DE | AOK30B65M2 | MG150Q2YS40 | FD1600-1200R17HP4-K-B2 | MMG300D120B6TN
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