All IGBT. SGP15N60RUF Datasheet

 

SGP15N60RUF IGBT. Datasheet pdf. Equivalent


   Type Designator: SGP15N60RUF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 160 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 64 nC
   Package: TO220

 SGP15N60RUF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGP15N60RUF Datasheet (PDF)

 ..1. Size:228K  samsung
sgp15n60ruf.pdf

SGP15N60RUF
SGP15N60RUF

N-CHANNEL IGBT SGP15N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

 6.1. Size:331K  infineon
sgp15n60.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 6.2. Size:333K  infineon
sgp15n60 sgw15n60g.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 8.1. Size:332K  infineon
sgp15n120 sgw15n120.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.2. Size:332K  infineon
sgp15n120 sgw15n120 rev2.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.3. Size:402K  infineon
sgp15n120 sgw15n120 rev2 6.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.4. Size:332K  infineon
sgp15n120.pdf

SGP15N60RUF
SGP15N60RUF

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

Datasheet: SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , FGA60N65SMD , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L .

 

 
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