All IGBT. SGP6N60UF Datasheet

 

SGP6N60UF Datasheet and Replacement


   Type Designator: SGP6N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 22 pF
   Qgⓘ - Total Gate Charge, typ: 15 nC
   Package: TO220
      - IGBT Cross-Reference

 

SGP6N60UF Datasheet (PDF)

 ..1. Size:219K  samsung
 sgp6n60uf.pdf pdf_icon

SGP6N60UF

N-CHANNEL IGBT SGP6N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageVG

 0.1. Size:272K  samsung
 sgp6n60ufd.pdf pdf_icon

SGP6N60UF

N-CHANNEL IGBT SGP6N60UFDFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 35nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

Datasheet: SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , IHW20N135R5 , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD .

History: RGTH60TS65D

Keywords - SGP6N60UF transistor datasheet

 SGP6N60UF cross reference
 SGP6N60UF equivalent finder
 SGP6N60UF lookup
 SGP6N60UF substitution
 SGP6N60UF replacement

 

 
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