SGW13N60UFD PDF and Equivalents Search

 

SGW13N60UFD Specs and Replacement

Type Designator: SGW13N60UFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 63 pF

Package: TO263

 SGW13N60UFD Substitution

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SGW13N60UFD datasheet

 ..1. Size:274K  samsung
 sgw13n60ufd.pdf pdf_icon

SGW13N60UFD

N-CHANNEL IGBT SGW13N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charac... See More ⇒

 4.1. Size:230K  samsung
 sgw13n60uf.pdf pdf_icon

SGW13N60UFD

N-CHANNEL IGBT SGW13N60UF FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage... See More ⇒

Specs: SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , IKW30N60H3 , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA .

Keywords - SGW13N60UFD transistor spec

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