All IGBT. SGW13N60UFD Datasheet

 

SGW13N60UFD Datasheet and Replacement


   Type Designator: SGW13N60UFD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Package: TO263
      - IGBT Cross-Reference

 

SGW13N60UFD Datasheet (PDF)

 ..1. Size:274K  samsung
 sgw13n60ufd.pdf pdf_icon

SGW13N60UFD

N-CHANNEL IGBT SGW13N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 37nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharac

 4.1. Size:230K  samsung
 sgw13n60uf.pdf pdf_icon

SGW13N60UFD

N-CHANNEL IGBT SGW13N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

Datasheet: SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , TGD30N40P , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA .

History: APTGF50X60BTP3 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | APT50GF120LR | JT075N120F2MA1E | CRG05T60A44S-G

Keywords - SGW13N60UFD transistor datasheet

 SGW13N60UFD cross reference
 SGW13N60UFD equivalent finder
 SGW13N60UFD lookup
 SGW13N60UFD substitution
 SGW13N60UFD replacement

 

 
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