HIA50N65IH-SA PDF and Equivalents Search

 

HIA50N65IH-SA Specs and Replacement

Type Designator: HIA50N65IH-SA

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 272 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 145 pF

Package: TO247

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HIA50N65IH-SA datasheet

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 hia50n65ih-sa.pdf pdf_icon

HIA50N65IH-SA

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

 3.1. Size:475K  semihow
 hia50n65ih-ja.pdf pdf_icon

HIA50N65IH-SA

Nov 2022 HIA50N65IH-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 2.00 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

 6.1. Size:479K  semihow
 hia50n65h-ja.pdf pdf_icon

HIA50N65IH-SA

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

 6.2. Size:481K  semihow
 hia50n65t-ja.pdf pdf_icon

HIA50N65IH-SA

Nov 2022 HIA50N65T-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package & ... See More ⇒

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Specs: SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , IRG4PC50W , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D .

History: IGW50N65F5 | IKW50N65H5 | STGD3HF60HDT4 | STGP30H60DF | SKW10N60A | STGF15M65DF2 | STGP35HF60W

Keywords - HIA50N65IH-SA transistor spec

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