SKM100GB123D Datasheet and Replacement
Type Designator: SKM100GB123D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 720 pF
Package: MODULE
- IGBT Cross-Reference
SKM100GB123D Datasheet (PDF)
skm100gb12v.pdf

SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1
skm100gb12t4g.pdf

SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80
Datasheet: HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , GT30J122 , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D .
History: IXGH24N170AH1 | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | AOK40B65HQ2 | APTGT300A120D3 | 1MB08D-120
Keywords - SKM100GB123D transistor datasheet
SKM100GB123D cross reference
SKM100GB123D equivalent finder
SKM100GB123D lookup
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History: IXGH24N170AH1 | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | AOK40B65HQ2 | APTGT300A120D3 | 1MB08D-120



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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