SKM145GAL123D PDF and Equivalents Search

 

SKM145GAL123D Specs and Replacement

Type Designator: SKM145GAL123D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 145 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 1000 pF

Package: MODULE

 SKM145GAL123D Substitution

- IGBT ⓘ Cross-Reference Search

 

SKM145GAL123D datasheet

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SKM145GAL123D

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SKM145GAL123D

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 4.1. Size:798K  semikron
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SKM145GAL123D

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 4.2. Size:630K  semikron
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SKM145GAL123D

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Specs: SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , STGW60V60DF , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , SKM145GB123D , SKM145GB124D .

History: NGD18N45CLBT4G | STGB18N40LZT4

Keywords - SKM145GAL123D transistor spec

 SKM145GAL123D cross reference
 SKM145GAL123D equivalent finder
 SKM145GAL123D lookup
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