SKM145GAL124DN Specs and Replacement
Type Designator: SKM145GAL124DN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 190 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE SKM145GAL124DN Substitution - IGBT ⓘ Cross-Reference Search
SKM145GAL124DN datasheet
Specs: SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , FGL60N100BNTD , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN .
History: SKM145GB063DN
Keywords - SKM145GAL124DN transistor spec
SKM145GAL124DN cross reference
SKM145GAL124DN equivalent finder
SKM145GAL124DN lookup
SKM145GAL124DN substitution
SKM145GAL124DN replacement
History: SKM145GB063DN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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