SKM145GAL174DN Specs and Replacement
Type Designator: SKM145GAL174DN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 860 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 1100 pF
Package: MODULE SKM145GAL174DN Substitution - IGBT ⓘ Cross-Reference Search
SKM145GAL174DN datasheet
Specs: SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , GT60N321 , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN .
History: SSM20G45EGH | RJH60V2BDPP-M0 | TT030K065EQ | SII100N12 | SGP23N60UF | T0900EB45A
Keywords - SKM145GAL174DN transistor spec
SKM145GAL174DN cross reference
SKM145GAL174DN equivalent finder
SKM145GAL174DN lookup
SKM145GAL174DN substitution
SKM145GAL174DN replacement
History: SSM20G45EGH | RJH60V2BDPP-M0 | TT030K065EQ | SII100N12 | SGP23N60UF | T0900EB45A
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