All IGBT. SKM150GB063D Datasheet

 

SKM150GB063D Datasheet and Replacement


   Type Designator: SKM150GB063D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 675 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 1000 pF
   Package: MODULE
      - IGBT Cross-Reference

 

SKM150GB063D Datasheet (PDF)

 ..1. Size:700K  semikron
skm150gb063d.pdf pdf_icon

SKM150GB063D

 6.1. Size:142K  semikron
skm150gb125d.pdf pdf_icon

SKM150GB063D

SEMITRANS MAbsolute Maximum RatingsValuesUltra Fast IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 150 GB 125 DIC Tcase = 25/80 C 150 / 100 4) AICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) APreliminary Data 5)VGES 20 VPtot per IGBT, Tcase = 25 C 1040 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 400

 6.2. Size:706K  semikron
skm150gb173d.pdf pdf_icon

SKM150GB063D

 6.3. Size:491K  semikron
skm150gb12v.pdf pdf_icon

SKM150GB063D

SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom

Datasheet: SKM145GAY123D , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , IRG7S313U , SKM150GB123D , SKM150GB124D , SKM150GB125D , SKM150GB173D , SKM150GB174D , SKM195GAL062D , SKM195GAL063DN , SKM195GAL124DN .

History: DIM600DDM17-A

Keywords - SKM150GB063D transistor datasheet

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 SKM150GB063D lookup
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 SKM150GB063D replacement

 

 
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