SKM150GB124D Specs and Replacement
Type Designator: SKM150GB124D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 190 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE SKM150GB124D Substitution - IGBT ⓘ Cross-Reference Search
SKM150GB124D datasheet
skm150gb125d.pdf
SEMITRANS M Absolute Maximum Ratings Values Ultra Fast IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 150 GB 125 D IC Tcase = 25/80 C 150 / 100 4) A ICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) A Preliminary Data 5) VGES 20 V Ptot per IGBT, Tcase = 25 C 1040 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 400... See More ⇒
skm150gb12v.pdf
SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12V Tc =80 C 141 A IFnom ... See More ⇒
Specs: SKM145GB123D, SKM145GB124D, SKM145GB124DN, SKM145GB174DN, SKM150GAL123D, SKM150GAR123D, SKM150GB063D, SKM150GB123D, KGF75N65KDF, SKM150GB125D, SKM150GB173D, SKM150GB174D, SKM195GAL062D, SKM195GAL063DN, SKM195GAL124DN, SKM195GAR063DN, SKM195GB062D
Keywords - SKM150GB124D transistor spec
SKM150GB124D cross reference
SKM150GB124D equivalent finder
SKM150GB124D lookup
SKM150GB124D substitution
SKM150GB124D replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2n2222 datasheet | irf9540 | 2n3055 datasheet | 2sc945 | irfp250n | irf9540n | bd139 datasheet | irf9640