All IGBT. SKM150GB125D Datasheet

 

SKM150GB125D IGBT. Datasheet pdf. Equivalent

Type Designator: SKM150GB125D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 1040W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 6.7V

Maximum Collector Current |Ic|, A: 150A

Maximum Junction Temperature (Tj), °C: 150

SKM150GB125D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM150GB125D Datasheet (PDF)

1.1. skm150gb173d.pdf Size:706K _igbt

SKM150GB125D
SKM150GB125D



1.2. skm150gb12vg.pdf Size:435K _igbt

SKM150GB125D
SKM150GB125D

SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 222 A Tj = 175 °C Tc =80°C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 187 A Tj = 175 °C SKM150GB12VG Tc =80°C 140 A IFno

1.3. skm150gb123d.pdf Size:599K _igbt

SKM150GB125D
SKM150GB125D



1.4. skm150gb12t4g.pdf Size:401K _igbt

SKM150GB125D
SKM150GB125D

SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 223 A Tj = 175 °C Tc =80°C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 183 A Tj = 175 °C SKM150GB12T4G Tc =80°

1.5. skm150gb12t4.pdf Size:457K _igbt

SKM150GB125D
SKM150GB125D

SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 232 A Tj = 175 °C Tc =80°C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 189 A Tj = 175 °C SKM150GB12T4 Tc =80°C

1.6. skm150gb12v.pdf Size:491K _igbt

SKM150GB125D
SKM150GB125D

SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 231 A Tj = 175 °C Tc =80°C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 189 A Tj = 175 °C SKM150GB12V Tc =80°C 141 A IFnom

Datasheet: SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , SKM150GB123D , SKM150GB124D , SKW30N60HS , SKM150GB173D , SKM150GB174D , SKM195GAL062D , SKM195GAL063DN , SKM195GAL124DN , SKM195GAR063DN , SKM195GB062D , SKM195GB063DN .

 


SKM150GB125D
  SKM150GB125D
  SKM150GB125D
 

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |