KMA4D5P20X Specs and Replacement
Type Designator: KMA4D5P20X
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: TSOP6
KMA4D5P20X substitution
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KMA4D5P20X datasheet
kma4d5p20x.pdf
SEMICONDUCTOR KMA4D5P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) MAXIMUM RATING... See More ⇒
kma4d5p20xa.pdf
SEMICONDUCTOR KMA4D5P20XA TECHNICAL DATA P-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES VDSS=-20V, ID=-4.5A. Drain... See More ⇒
Detailed specifications: KF80N08P , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , 5N60 , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA .
Keywords - KMA4D5P20X MOSFET specs
KMA4D5P20X cross reference
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KMA4D5P20X substitution
KMA4D5P20X replacement
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