RFP12N10L PDF and Equivalents Search

 

RFP12N10L Specs and Replacement

Type Designator: RFP12N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 325(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220AB

RFP12N10L substitution

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RFP12N10L datasheet

 ..1. Size:131K  fairchild semi
rfp12n10l.pdf pdf_icon

RFP12N10L

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv... See More ⇒

 ..2. Size:533K  onsemi
rfp12n10l.pdf pdf_icon

RFP12N10L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , SPP20N60C3 , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L , RFP14N06 , RFP14N06L , RFP15N05L , RFP15N06L .

Keywords - RFP12N10L MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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