All MOSFET. 75321D3 Datasheet

 

75321D3 Datasheet and Replacement


   Type Designator: 75321D3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252AA
 

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75321D3 Datasheet (PDF)

 0.1. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf pdf_icon

75321D3

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 0.2. Size:224K  fairchild semi
 hufa75321d3 hufa75321d3st.pdf pdf_icon

75321D3

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 0.3. Size:798K  cn vbsemi
 huf75321d3s.pdf pdf_icon

75321D3

HUF75321D3Swww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

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Datasheet: 40821 , 40822 , 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , IRFZ44N , 75321P , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S .

History: STP7N20FI

Keywords - 75321D3 MOSFET datasheet

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