All MOSFET. BUK9511-55A Datasheet

 

BUK9511-55A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9511-55A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 166 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO220AB

BUK9511-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9511-55A Datasheet (PDF)

1.1. buk9511-55a buk9611-55a.pdf Size:341K _philips

BUK9511-55A
BUK9511-55A

BUK9511-55A; BUK9611-55A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

4.1. buk951r6-30e.pdf Size:218K _update_mosfet

BUK9511-55A
BUK9511-55A

BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

4.2. buk9515-60e.pdf Size:212K _update_mosfet

BUK9511-55A
BUK9511-55A

BUK9515-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

 4.3. buk9516.pdf Size:102K _update_mosfet

BUK9511-55A
BUK9511-55A

 Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A ’trench’ technolo

4.4. buk9515-100a buk9615-100a.pdf Size:70K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology whic

 4.5. buk9518-55.pdf Size:52K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resistance and

4.6. buk9510-55a buk9610-55a.pdf Size:327K _philips

BUK9511-55A
BUK9511-55A

BUK9510-55A; BUK9610-55A TrenchMOS logic level FET Rev. 01 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 compli

4.7. buk9514-30 1.pdf Size:47K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9514-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 69 A low on-state resistance and

4.8. buk9516-55a buk9616-55a.pdf Size:102K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A trench technology which

4.9. buk9516-75b buk9616-75b.pdf Size:300K _philips

BUK9511-55A
BUK9511-55A

BUK95/9616-75B TrenchMOS logic level FET Rev. 01 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistan

4.10. buk9510-100b buk9610-100b.pdf Size:342K _philips

BUK9511-55A
BUK9511-55A

BUK95/9610-100B TrenchMOS logic level FET Rev. 02 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

4.11. buk9518-30 1.pdf Size:47K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resistance and

4.12. buk9510-30 1.pdf Size:49K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9510-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and

4.13. buk95150-55a buk96150-55a.pdf Size:71K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench technology whic

4.14. buk9514-55 2.pdf Size:53K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9514-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 68 A low on-state resistance and

4.15. buk9514-55a buk9614-55a.pdf Size:322K _philips

BUK9511-55A
BUK9511-55A

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101 comp

4.16. buk9518-55a buk9618-55a.pdf Size:333K _philips

BUK9511-55A
BUK9511-55A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 complia

4.17. buk95180-100a buk96180-100a.pdf Size:68K _philips

BUK9511-55A
BUK9511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench technology w

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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