BUK9515-100A Datasheet. Specs and Replacement
Type Designator: BUK9515-100A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0144 Ohm
Package: TO220AB
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BUK9515-100A substitution
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BUK9515-100A datasheet
..1. Size:70K philips
buk9515-100a buk9615-100a.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench techno... See More ⇒
6.1. Size:212K nxp
buk9515-60e.pdf
BUK9515-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ... See More ⇒
7.1. Size:71K philips
buk95150-55a buk96150-55a buk96150-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench techno... See More ⇒
8.1. Size:68K philips
buk95180-100a buk96180-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench tec... See More ⇒
8.2. Size:102K philips
buk9516-55a buk9616-55a buk9516.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A trench technolo... See More ⇒
8.3. Size:327K philips
buk9510-55a buk9610-55a.pdf
BUK9510-55A; BUK9610-55A TrenchMOS logic level FET Rev. 01 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology ... See More ⇒
8.4. Size:333K philips
buk9518-55a buk9618-55a.pdf
BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q... See More ⇒
8.5. Size:47K philips
buk9514-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9514-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 69 A low on-state resist... See More ⇒
8.6. Size:47K philips
buk9518-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resist... See More ⇒
8.7. Size:342K philips
buk9510-100b buk9610-100b.pdf
BUK95/9610-100B TrenchMOS logic level FET Rev. 02 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state r... See More ⇒
8.8. Size:300K philips
buk9516-75b buk9616-75b.pdf
BUK95/9616-75B TrenchMOS logic level FET Rev. 01 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state... See More ⇒
8.9. Size:52K philips
buk9518-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resist... See More ⇒
8.10. Size:49K philips
buk9510-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9510-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resist... See More ⇒
8.11. Size:322K philips
buk9514-55a buk9614-55a.pdf
BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology ... See More ⇒
8.12. Size:53K philips
buk9514-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9514-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 68 A low on-state resist... See More ⇒
8.13. Size:341K philips
buk9511-55a buk9611-55a.pdf
BUK9511-55A; BUK9611-55A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS techno... See More ⇒
8.14. Size:218K nxp
buk951r6-30e.pdf
BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
8.15. Size:225K inchange semiconductor
buk9518-55a.pdf
isc N-Channel MOSFET Transistor BUK9518-55A FEATURES Static drain-source on-resistance RDS(on) 16m Fully characterized avalanche voltage and current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Automotive and general purpose power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Detailed specifications: BUK9509-40B, BUK9509-75A, BUK9510-100B, BUK9510-55A, BUK9511-55A, BUK9512-55B, BUK9514-55A, BUK95150-55A, 8205A, BUK9516-55A, BUK9516-75B, BUK95180-100A, BUK9518-55A, BUK9520-100A, BUK9520-100B, BUK9520-55A, BUK9523-75A
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