All MOSFET. BUK9516-55A Datasheet

 

BUK9516-55A Datasheet and Replacement


   Type Designator: BUK9516-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220AB
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BUK9516-55A Datasheet (PDF)

 ..1. Size:102K  philips
buk9516-55a buk9616-55a buk9516.pdf pdf_icon

BUK9516-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 66 Atrench technolo

 6.1. Size:300K  philips
buk9516-75b buk9616-75b.pdf pdf_icon

BUK9516-55A

BUK95/9616-75BTrenchMOS logic level FETRev. 01 23 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9516-75B in SOT78 (TO-220AB)BUK9616-75B in SOT404 (D2-PAK).1.2 Features Very low on-state

 8.1. Size:68K  philips
buk95180-100a buk96180-100a.pdf pdf_icon

BUK9516-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

 8.2. Size:71K  philips
buk95150-55a buk96150-55a buk96150-55a.pdf pdf_icon

BUK9516-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 13 Atrench techno

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AP9971AGJ-HF | AP9992GP-A-HF | 2SK932 | HM3414 | AP9T16GH | 3N140 | AP9972AGP-HF

Keywords - BUK9516-55A MOSFET datasheet

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