BUK9520-55A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9520-55A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 118
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 54
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
TO220AB
BUK9520-55A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9520-55A
Datasheet (PDF)
4.1. Size:52K philips
buk9520-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist
6.1. Size:197K philips
buk9520-100b.pdf
BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
6.2. Size:321K philips
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
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