BUK9520-55A Datasheet and Replacement. Cross Reference Search

BUK9520-55A Datasheet (PDF)

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Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist

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BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

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BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

Datasheet: BUK95150-55A , BUK9515-100A , BUK9516-55A , BUK9516-75B , BUK95180-100A , BUK9518-55A , BUK9520-100A , BUK9520-100B , STP75NF75 , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B , BUK9535-100A , BUK9535-55A , BUK953R2-40B , BUK954R2-55B .