BUK9523-75A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9523-75A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 53
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TO220AB
BUK9523-75A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9523-75A
Datasheet (PDF)
..1. Size:324K philips
buk9523-75a buk9623-75a.pdf 
BUK9523-75A; BUK9623-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9523-75A in SOT78 (TO-220AB)BUK9623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techno
8.1. Size:52K philips
buk9520-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist
8.2. Size:197K philips
buk9520-100b.pdf
BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
8.3. Size:52K philips
buk9524-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9524-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 45 Alow on-state resist
8.4. Size:321K philips
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
8.5. Size:340K philips
buk952r8-30b buk962r8-30b.pdf
BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state
8.6. Size:297K philips
buk9529-100b buk9629-100b.pdf
BUK95/9629-100BTrenchMOS logic level FETRev. 01 18 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9529-100B in SOT78 (TO-220AB)BUK9629-100B in SOT404 (D2-PAK).1.2 Features Very low on-st
8.7. Size:52K philips
buk9528-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9528-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 40 Alow on-state resist
8.8. Size:77K philips
buk9528 buk9628-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 49 Atrench techn
8.9. Size:333K philips
buk9524-55a buk9624-55a.pdf
BUK9524-55A; BUK9624-55ATrenchMOS logic level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9524-55A in SOT78 (TO-220AB)BUK9624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tech
8.10. Size:317K philips
buk9528-55a buk9528-55a buk9628-55a.pdf
BUK9528-55A; BUK9628-55ATrenchMOS logic level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9528-55A in SOT78 (TO-220AB)BUK9628-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno
8.11. Size:213K nxp
buk952r8-60e.pdf
BUK952R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
8.12. Size:213K nxp
buk952r3-40e.pdf
BUK952R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
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