All MOSFET. 75329S Datasheet

 

75329S MOSFET. Datasheet pdf. Equivalent

Type Designator: 75329S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 49 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO263AB

75329S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

75329S Datasheet (PDF)

0.1. huf75329g3 huf75329p3 huf75329s3s.pdf Size:252K _fairchild_semi

75329S
75329S

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs • 49A, 55V These N-Channel power MOSFETs • Ultra Low On-Resistance, rDS(ON) = 0.024Ω are manufactured using the • Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Available on t

0.2. hufa75329p3 hufa75329s3s.pdf Size:292K _fairchild_semi

75329S
75329S

HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs • 49A, 55V These N-Channel power MOSFETs • Ultra Low On-Resistance, rDS(ON) = 0.024Ω are manufactured using the • Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Available on th

 9.1. huf75329d3-s.pdf Size:225K _fairchild_semi

75329S
75329S

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the

9.2. hufa75329d3st hufa75329d3 hufa75329d3s.pdf Size:309K _fairchild_semi

75329S
75329S

HUFA75329D3, HUFA75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Mode

 9.3. huf75329d3st.pdf Size:660K _fairchild_semi

75329S
75329S

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou

Datasheet: 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , 75329P , BS170 , 75333G , 75333P , 75333S , 75339G , 75339P , 75339S , 7N50A , A498 .

 

 
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