All MOSFET. BUK9615-100A Datasheet

 

BUK9615-100A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9615-100A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 75 A

Maximum Drain-Source On-State Resistance (Rds): 0.0144 Ohm

Package: D2PAK

BUK9615-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK9615-100A Datasheet (PDF)

1.1. buk9515-100a_buk9615-100a.pdf Size:70K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology whic

3.1. buk95150-55a_buk96150-55a.pdf Size:71K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A ’trench’ technology whic

4.1. buk9614-30_1.pdf Size:50K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 69 A Thedevice features very

4.2. buk9510-55a_buk9610-55a.pdf Size:327K _philips

BUK9615-100A
BUK9615-100A

BUK9510-55A; BUK9610-55A TrenchMOS™ logic level FET Rev. 01 — 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS™ technology Q101 compli

4.3. buk9516-55a_buk9616-55a.pdf Size:102K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A ’trench’ technology which

4.4. buk9511-55a_buk9611-55a.pdf Size:341K _philips

BUK9615-100A
BUK9615-100A

BUK9511-55A; BUK9611-55A TrenchMOS™ logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101

4.5. buk9516-75b_buk9616-75b.pdf Size:300K _philips

BUK9615-100A
BUK9615-100A

BUK95/9616-75B TrenchMOS™ logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistan

4.6. buk9510-100b_buk9610-100b.pdf Size:342K _philips

BUK9615-100A
BUK9615-100A

BUK95/9610-100B TrenchMOS™ logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

4.7. buk9514-55a_buk9614-55a.pdf Size:322K _philips

BUK9615-100A
BUK9615-100A

BUK9514-55A; BUK9614-55A TrenchMOS™ logic level FET Rev. 01 — 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 comp

4.8. buk9518-55a_buk9618-55a.pdf Size:333K _philips

BUK9615-100A
BUK9615-100A

BUK9518-55A; BUK9618-55A TrenchMOS™ logic level FET Rev. 01 — 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS™ technology Q101 complia

4.9. buk95180-100a_buk96180-100a.pdf Size:68K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A ’trench’ technology w

4.10. buk9618-30_1.pdf Size:50K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 55 A Thedevice features very

4.11. buk9610-30_1.pdf Size:52K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9610-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 75 A Thedevice features very

4.12. buk9614-55_1.pdf Size:56K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 68 A the device features ver

4.13. buk9618-55_1.pdf Size:55K _philips

BUK9615-100A
BUK9615-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 57 A the device features ver

Datasheet: BUK9609-40B , BUK9609-55A , BUK9609-75A , BUK9610-100B , BUK9610-55A , BUK9611-55A , BUK9612-55B , BUK9614-55A , IRFZ24N , BUK9616-55A , BUK9616-75B , BUK96180-100A , BUK9618-55A , BUK9620-100B , BUK9620-55A , BUK9623-75A , BUK9624-55A .

 


BUK9615-100A
  BUK9615-100A
  BUK9615-100A
  BUK9615-100A
 
BUK9615-100A
  BUK9615-100A
  BUK9615-100A
  BUK9615-100A
 

social 

LIST

Last Update

MOSFET: 2SK1024-01 | 2SK1023-01 | 2SK1022 | 2SK1021 | 2SK1020 | 2SK1018 | 2SK1017-01 | 2SK1016-01 | 2SK1015-01 | 2SK1015 | 2SK1014-01 | 2SK1012-01 | 2SK1011-01 | 2SK957-MR | 2SK957-M |

Enter a full or partial SMD code with a minimum of 2 letters or numbers