BUK9620-100B Specs and Replacement

Type Designator: BUK9620-100B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 203 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm

Package: D2PAK

BUK9620-100B substitution

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BUK9620-100B datasheet

 ..1. Size:196K  philips
 buk9620-100b.pdf pdf_icon

BUK9620-100B

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 ..2. Size:698K  nxp
 buk9620-100b.pdf pdf_icon

BUK9620-100B

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 3.1. Size:321K  philips
 buk9520-100a buk9620-100a buk9620-100a.pdf pdf_icon

BUK9620-100B

BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t... See More ⇒

 6.1. Size:55K  philips
 buk9620-55 2.pdf pdf_icon

BUK9620-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 52 A the device fea... See More ⇒

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Detailed specifications: BUK9611-55A, BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A, BUK9616-75B, BUK96180-100A, BUK9618-55A, 4N60, BUK9620-55A, BUK9623-75A, BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B, BUK962R8-30B, BUK9635-100A

Keywords - BUK9620-100B MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.