BUK964R2-55B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK964R2-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 95 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0037 Ohm
Package: D2PAK
BUK964R2-55B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK964R2-55B Datasheet (PDF)
1.1. buk964r2-60e.pdf 
Size:207K _update_mosfet
BUK964R2-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava
1.2. buk964r2-80e.pdf Size:263K _update_mosfet
BUK964R2-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui
3.1. buk964r1-40e.pdf Size:208K _update_mosfet
BUK964R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava
3.2. buk964r7-80e.pdf Size:253K _update_mosfet
BUK964R7-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui
3.3. buk964r8-60e.pdf Size:207K _update_mosfet
BUK964R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava
3.4. buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf Size:318K _philips
BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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