All MOSFET. 75339S Datasheet

 

75339S Datasheet and Replacement


   Type Designator: 75339S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 124 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263AB
 

 75339S substitution

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75339S Datasheet (PDF)

 0.1. Size:226K  fairchild semi
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75339S

HUFA75339G3, HUFA75339P3, HUFA75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 0.2. Size:308K  fairchild semi
huf75339g3 huf75339p3 huf75339s3s.pdf pdf_icon

75339S

HUF75339G3, HUF75339P3, HUF75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 9.1. Size:803K  onsemi
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75339S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:258K  inchange semiconductor
hufa75339g3.pdf pdf_icon

75339S

Isc N-Channel MOSFET Transistor HUFA75339G3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P , IRF1404 , 7N50A , A498 , ALD1101APA , ALD1101BPA , ALD1101DA , ALD1101MA , APT1001R1AN , APT1001R1AVR .

Keywords - 75339S MOSFET datasheet

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