BUK9Y19-55B Specs and Replacement

Type Designator: BUK9Y19-55B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0173 Ohm

Package: LFPAK

BUK9Y19-55B substitution

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BUK9Y19-55B datasheet

 ..1. Size:734K  nxp
buk9y19-55b.pdf pdf_icon

BUK9Y19-55B

BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for... See More ⇒

 6.1. Size:749K  nxp
buk9y19-75b.pdf pdf_icon

BUK9Y19-55B

BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature... See More ⇒

 6.2. Size:321K  nxp
buk9y19-100e.pdf pdf_icon

BUK9Y19-55B

BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications 12 V, 24 V and 48 V Automotive sys... See More ⇒

 8.1. Size:89K  philips
buk9y11-30b.pdf pdf_icon

BUK9Y19-55B

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒

Detailed specifications: BUK9MRR-65PKK, BUK9MTT-65PBB, BUK9Y07-30B, BUK9Y09-40B, BUK9Y104-100B, BUK9Y11-30B, BUK9Y12-55B, BUK9Y14-40B, IRF640N, BUK9Y19-75B, BUK9Y22-30B, BUK9Y27-40B, BUK9Y30-75B, BUK9Y34-100B, BUK9Y40-55B, BUK9Y53-100B, BUK9Y58-75B

Keywords - BUK9Y19-55B MOSFET specs

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