All MOSFET. BUK9Y30-75B Datasheet

 

BUK9Y30-75B Datasheet and Replacement


   Type Designator: BUK9Y30-75B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: LFPAK
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BUK9Y30-75B Datasheet (PDF)

 ..1. Size:665K  nxp
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BUK9Y30-75B

BUK9Y30-75BN-channel TrenchMOS logic level FETRev. 04 10 April 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 8.1. Size:268K  nxp
buk9y3r5-40e.pdf pdf_icon

BUK9Y30-75B

BUK9Y3R5-40EN-channel 40 V, 3.8 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 Compliant Repe

 8.2. Size:311K  nxp
buk9y38-100e.pdf pdf_icon

BUK9Y30-75B

BUK9Y38-100EN-channel 100 V, 38 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.3. Size:262K  nxp
buk9y3r0-40e.pdf pdf_icon

BUK9Y30-75B

BUK9Y3R0-40EN-channel 40 V 3.0 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SVS7N60DD2TR | 2SK3284 | G16P03S | 6N65KL-TMS-T

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