NX3008PBKT Specs and Replacement

Type Designator: NX3008PBKT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.1 Ohm

Package: SC75

NX3008PBKT substitution

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NX3008PBKT datasheet

 5.1. Size:1607K  nxp
 nx3008pbkv.pdf pdf_icon

NX3008PBKT

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection ... See More ⇒

 5.2. Size:1602K  nxp
 nx3008pbk.pdf pdf_icon

NX3008PBKT

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t... See More ⇒

 5.3. Size:1601K  nxp
 nx3008pbkw.pdf pdf_icon

NX3008PBKT

NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre... See More ⇒

 5.4. Size:1653K  nxp
 nx3008pbkmb.pdf pdf_icon

NX3008PBKT

NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up... See More ⇒

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Detailed specifications: NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT, NX3008NBKV, NX3008NBKW, NX3008PBK, NX3008PBKS, IRF9540N, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT

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