NX3008PBKV
MOSFET. Datasheet pdf. Equivalent
Type Designator: NX3008PBKV
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 0.22
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.1
Ohm
Package:
SOT666
NX3008PBKV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX3008PBKV
Datasheet (PDF)
..1. Size:1607K nxp
nx3008pbkv.pdf 
NX3008PBKV30 V, 220 mA dual P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection
5.1. Size:1602K nxp
nx3008pbk.pdf
NX3008PBK30 V, 230 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t
5.2. Size:1601K nxp
nx3008pbkw.pdf
NX3008PBKW30 V, 200 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre
5.3. Size:1653K nxp
nx3008pbkmb.pdf
NX3008PBKMB30 V, single P-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up
5.4. Size:1620K nxp
nx3008pbks.pdf
NX3008PBKS30 V, 200 mA dual P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2
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