PHB191NQ06LT Specs and Replacement
Type Designator: PHB191NQ06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: D2PAK
PHB191NQ06LT substitution
- MOSFET ⓘ Cross-Reference Search
PHB191NQ06LT datasheet
php191nq06lt phb191nq06lt.pdf
PHP/PHB191NQ06LT N-channel TrenchMOS logic level FET Rev. 01 05 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC... See More ⇒
phb191nq06lt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
phb193nq06t.pdf
PHP/PHB193NQ06T N-channel TrenchMOS standard level FET Rev. 01 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC ... See More ⇒
Detailed specifications: NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T, SKD502T, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T
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