PHB191NQ06LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB191NQ06LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 95.6
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
D2PAK
PHB191NQ06LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB191NQ06LT
Datasheet (PDF)
..1. Size:91K philips
php191nq06lt phb191nq06lt.pdf
PHP/PHB191NQ06LTN-channel TrenchMOS logic level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
..2. Size:323K nxp
phb191nq06lt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.1. Size:91K philips
phb193nq06t.pdf
PHP/PHB193NQ06TN-channel TrenchMOS standard level FETRev. 01 06 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
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