PHB32N06LT Datasheet and Replacement
Type Designator: PHB32N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: D2PAK
PHB32N06LT substitution
PHB32N06LT Datasheet (PDF)
php32n06lt php32n06lt phb32n06lt.pdf

PHP32N06LT; PHB32N06LTN-channel enhancement mode field effect transistorRev. 01 06 November 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP32N06LT in SOT78 (TO220AB)PHB32N06LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Logic level compatible.
phb32n06lt.pdf

PHB32N06LTN-channel TrenchMOS logic level FETRev. 02 30 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature
phb32n06.pdf

PHB32N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir
Datasheet: PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T , 4435 , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT .
History: P0903BV | LSF55R140GT | VBE2311 | 2SJ451 | AOSS21311C | TMU630Z | PMV100ENEA
Keywords - PHB32N06LT MOSFET datasheet
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History: P0903BV | LSF55R140GT | VBE2311 | 2SJ451 | AOSS21311C | TMU630Z | PMV100ENEA



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