PHB32N06LT Specs and Replacement
Type Designator: PHB32N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: D2PAK
PHB32N06LT substitution
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PHB32N06LT datasheet
php32n06lt php32n06lt phb32n06lt.pdf
PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Logic level compatible. ... See More ⇒
phb32n06lt.pdf
PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature... See More ⇒
phb32n06.pdf
PHB32N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir... See More ⇒
Detailed specifications: PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, 5N65, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT
Keywords - PHB32N06LT MOSFET specs
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