PHB32N06LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB32N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 17 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: D2PAK
PHB32N06LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB32N06LT Datasheet (PDF)
php32n06lt php32n06lt phb32n06lt.pdf
PHP32N06LT; PHB32N06LTN-channel enhancement mode field effect transistorRev. 01 06 November 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP32N06LT in SOT78 (TO220AB)PHB32N06LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Logic level compatible.
phb32n06lt.pdf
PHB32N06LTN-channel TrenchMOS logic level FETRev. 02 30 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature
phb32n06.pdf
PHB32N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
